All MOSFET. IRF3808 Datasheet

 

IRF3808 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3808

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 140 A

Total Gate Charge (Qg): 150 nC

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO220AB

IRF3808 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3808 Datasheet (PDF)

1.1. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

IRF3808
IRF3808

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 106A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

1.2. irf3808l.pdf Size:165K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω Dynamic dv/dt Rating G 175°C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 1.3. irf3808s.pdf Size:161K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007? Dynamic dv/dt Rating G 175C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax D

1.4. irf3808pbf.pdf Size:246K _international_rectifier

IRF3808
IRF3808

PD - 94972A IRF3808PbF HEXFET® Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 140A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET ® Power

 1.5. irf3808.pdf Size:131K _international_rectifier

IRF3808
IRF3808

PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.007? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 140AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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