All MOSFET. IRF3808 Datasheet

 

IRF3808 Datasheet and Replacement


   Type Designator: IRF3808
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220AB
 

 IRF3808 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF3808 Datasheet (PDF)

 ..1. Size:246K  international rectifier
irf3808pbf.pdf pdf_icon

IRF3808

PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power

 ..2. Size:131K  international rectifier
irf3808.pdf pdf_icon

IRF3808

PD - 94291BIRF3808AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical Applications Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.007 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating TemperatureID = 140AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescr

 ..3. Size:245K  inchange semiconductor
irf3808.pdf pdf_icon

IRF3808

isc N-Channel MOSFET Transistor IRF3808IIRF3808FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 0.1. Size:161K  international rectifier
irf3808s.pdf pdf_icon

IRF3808

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDP030N06BF102 | AOT1606L | GP28S50XN3P | SM1A02NSF | MDP10N055 | RU55111R

Keywords - IRF3808 MOSFET datasheet

 IRF3808 cross reference
 IRF3808 equivalent finder
 IRF3808 lookup
 IRF3808 substitution
 IRF3808 replacement

 

 
Back to Top

 


 
.