Справочник MOSFET. IRF3808

 

IRF3808 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3808
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 140 ns
   Cossⓘ - Выходная емкость: 890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRF3808

 

 

IRF3808 Datasheet (PDF)

 ..1. Size:246K  international rectifier
irf3808pbf.pdf

IRF3808
IRF3808

PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power

 ..2. Size:131K  international rectifier
irf3808.pdf

IRF3808
IRF3808

PD - 94291BIRF3808AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical Applications Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.007 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating TemperatureID = 140AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescr

 ..3. Size:246K  infineon
irf3808pbf.pdf

IRF3808
IRF3808

PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power

 ..4. Size:245K  inchange semiconductor
irf3808.pdf

IRF3808
IRF3808

isc N-Channel MOSFET Transistor IRF3808IIRF3808FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 0.1. Size:161K  international rectifier
irf3808s.pdf

IRF3808
IRF3808

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

 0.2. Size:309K  international rectifier
irf3808lpbf irf3808spbf.pdf

IRF3808
IRF3808

PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H

 0.3. Size:221K  international rectifier
auirf3808.pdf

IRF3808
IRF3808

PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D

 0.4. Size:220K  international rectifier
auirf3808s.pdf

IRF3808
IRF3808

PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 0.5. Size:165K  international rectifier
irf3808l.pdf

IRF3808
IRF3808

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

 0.6. Size:258K  inchange semiconductor
irf3808s.pdf

IRF3808
IRF3808

Isc N-Channel MOSFET Transistor IRF3808SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.7. Size:256K  inchange semiconductor
irf3808l.pdf

IRF3808
IRF3808

Isc N-Channel MOSFET Transistor IRF3808LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

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