Справочник MOSFET. IRF3808

 

IRF3808 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF3808

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 330 W

Предельно допустимое напряжение сток-исток (Uds): 75 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 140 A

Общий заряд затвора (Qg): 150 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRF3808

 

 

IRF3808 Datasheet (PDF)

1.1. irf3808s.pdf Size:161K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007? Dynamic dv/dt Rating G 175C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax D

1.2. irf3808.pdf Size:131K _international_rectifier

IRF3808
IRF3808

PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.007? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 140AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

 1.3. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

IRF3808
IRF3808

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 106A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

1.4. irf3808l.pdf Size:165K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω Dynamic dv/dt Rating G 175°C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 1.5. irf3808pbf.pdf Size:246K _international_rectifier

IRF3808
IRF3808

PD - 94972A IRF3808PbF HEXFET® Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 140A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET ® Power

1.6. irf3808s.pdf Size:258K _inchange_semiconductor

IRF3808
IRF3808

Isc N-Channel MOSFET Transistor IRF3808S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.7. irf3808.pdf Size:245K _inchange_semiconductor

IRF3808
IRF3808

isc N-Channel MOSFET Transistor IRF3808,IIRF3808 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

Другие MOSFET... IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 , IRF3805 , IRF3805L , IRF3805S , IRF3805S-7P , IRF3205 , IRF3808S , IRF4104 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS , IRF5801 .

 

 
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