IRF640N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF640N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 200 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 67 nC

Tiempo de elevación (tr): 19 nS

Conductancia de drenaje-sustrato (Cd): 185 pF

Resistencia drenaje-fuente RDS(on): 0.15 Ohm

Paquete / Caja (carcasa): TO220AB

Búsqueda de reemplazo de MOSFET IRF640N

IRF640N Datasheet (PDF)

..1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier

PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

..2. irf640n.pdf Size:155K _international_rectifier

PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

..3. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon

..4. irf640n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

0.1. irf640ns.pdf Size:228K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

0.2. irf640nl.pdf Size:244K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.1. irf640 irf640fi.pdf Size:317K _1

8.2. irf640.rev1.pdf Size:109K _motorola

ClibPDF - www.fastio.comClibPDF - www.fastio.comClibPDF - www.fastio.com

8.3. irf640s.pdf Size:228K _international_rectifier

PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co

8.4. irf640s-l.pdf Size:935K _international_rectifier

PD - 95113IRF640S/LPbF Lead-Free3/16/04Document Number: 91037 www.vishay.com1IRF640S/LPbFDocument Number: 91037 www.vishay.com2IRF640S/LPbFDocument Number: 91037 www.vishay.com3IRF640S/LPbFDocument Number: 91037 www.vishay.com4IRF640S/LPbFDocument Number: 91037 www.vishay.com5IRF640S/LPbFDocument Number: 91037 www.vishay.com6IRF640S/LPbFDocum

8.5. irf640.pdf Size:178K _international_rectifier

8.6. irf640pbf.pdf Size:2211K _international_rectifier

PD - 94930IRF640PbF Lead-Free1/8/04Document Number: 91036 www.vishay.com1IRF640PbFDocument Number: 91036 www.vishay.com2IRF640PbFDocument Number: 91036 www.vishay.com3IRF640PbFDocument Number: 91036 www.vishay.com4IRF640PbFDocument Number: 91036 www.vishay.com5IRF640PbFDocument Number: 91036 www.vishay.com6IRF640PbFTO-220AB Package OutlineD

8.7. irf640 s 1.pdf Size:97K _philips

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technolog

8.8. irf640 irf640fp.pdf Size:332K _st

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

8.9. irf640fp.pdf Size:330K _st

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

8.10. irf640.pdf Size:57K _st

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

8.11. irf640f fp.pdf Size:107K _st

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

8.12. irf640 rf1s640 rf1s640sm.pdf Size:128K _fairchild_semi

IRF640, RF1S640, RF1S640SMData Sheet January 200218A, 200V, 0.180 Ohm, N-Channel Power FeaturesMOSFETs 18A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.180power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

8.13. irf640b irfs640b.pdf Size:916K _fairchild_semi

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

8.14. irf640a.pdf Size:942K _samsung

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

8.15. irf640lpbf irf640spbf sihf640l sihf640s.pdf Size:196K _vishay

IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi

8.16. irf640 sihf640.pdf Size:196K _vishay

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

8.17. irf640pbf sihf640.pdf Size:197K _vishay

8.18. irf640s sihf640s sihf640l.pdf Size:209K _vishay

IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single

8.19. irf640 irf641 irf642 irf643 rf1s640.pdf Size:51K _harris_semi

IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar

8.20. irf640.pdf Size:976K _wietron

IRF640N-Channel EnhancementDRAIN CURRENTMode POWER MOSFET 18 AMPERES3 DRAINDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free200 VOLTAGE1 GATEFeatures:2*Super High Dense Cell Design For Low RDS(ON)SOURCERDS(ON)

8.21. irf640h.pdf Size:596K _nell

RoHS IRF640 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(18A, 200Volts)DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.DD They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia

8.22. irf640p.pdf Size:2053K _cn_vbsemi

IRF640Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Chan

8.23. irf640.pdf Size:183K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc

Otros transistores... IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 , IRF630N , IRF630NL , IRF630NS , IRF630 , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF6610 .

Liste

Recientemente añadidas las descripciónes de los transistores: