IRF640N Datasheet. Specs and Replacement

The IRF640N is an N-channel power MOSFET designed for high-speed switching and efficient power management. It features a low R_DS(on) of 0.15Ω, enabling minimal conduction losses, can handle a continuous drain current of up to 18A with a maximum drain-source voltage of 200V. Its gate threshold voltage ranges from 2V to 4V, allowing reliable switching in logic-level circuits. The device’s robust thermal performance and fast switching speed make it suitable for applications in power supplies, motor control, DC-DC converters. Its TO220 package ensures easy mounting and heat dissipation.

Type Designator: IRF640N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220AB

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IRF640N datasheet

 ..1. Size:155K  international rectifier
 irf640n.pdf pdf_icon

IRF640N

PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15 Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processi... See More ⇒

 ..2. Size:336K  international rectifier
 irf640nlpbf irf640npbf irf640nspbf.pdf pdf_icon

IRF640N

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif... See More ⇒

 ..3. Size:336K  international rectifier
 irf640npbf irf640nspbf irf640nlpbf.pdf pdf_icon

IRF640N

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif... See More ⇒

 ..4. Size:723K  cn evvo
 irf640n.pdf pdf_icon

IRF640N

IRF640N N-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excel... See More ⇒

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Detailed specifications: IRF540ZL, IRF540ZS, IRF5801, IRF5802, IRF6201, IRF630N, IRF630NL, IRF630NS, IRF640N, IRF640NL, IRF640NS, IRF6603, IRF6604, IRF6607, IRF6608, IRF6609, IRF6610

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