BF909WR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF909WR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 7 V
|Id|ⓘ - Corriente continua de drenaje: 0.04 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 3.6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
Paquete / Cubierta: SOT343R
Búsqueda de reemplazo de BF909WR MOSFET
BF909WR Datasheet (PDF)
bf909wr.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f
bf909wr 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit
bf909 bf909r 01.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu
bf909 bf909r 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu
Otros transistores... BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , STF13NM60N , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .
History: 40N10K | G37 | G60N04 | 3205TR | SST271 | SML60H20 | 3400L
History: 40N10K | G37 | G60N04 | 3205TR | SST271 | SML60H20 | 3400L



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