BF909WR Todos los transistores

 

BF909WR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF909WR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 3.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
   Paquete / Cubierta: SOT343R
 

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BF909WR Datasheet (PDF)

 ..1. Size:137K  philips
 bf909wr.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

 ..2. Size:132K  philips
 bf909wr 2.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit

 9.1. Size:118K  philips
 bf909 bf909r 01.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 9.2. Size:154K  philips
 bf909 bf909r 1.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

MOSTRAR MÁS

Otros transistores... BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , IRF520 , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .

History: IPB024N08N5

 

 
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