Справочник MOSFET. BF909WR

 

BF909WR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BF909WR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.04 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 3.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm
   Тип корпуса: SOT343R
     - подбор MOSFET транзистора по параметрам

 

BF909WR Datasheet (PDF)

 ..1. Size:137K  philips
bf909wr.pdfpdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

 ..2. Size:132K  philips
bf909wr 2.pdfpdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit

 9.1. Size:118K  philips
bf909 bf909r 01.pdfpdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 9.2. Size:154K  philips
bf909 bf909r 1.pdfpdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

Другие MOSFET... BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , 10N65 , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .

History: SSP6N70A | CM20N50P | JCS2N60MB | P0908ATF | 2SK4108 | 2SK2424 | AP9997GP-HF

 

 
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