BF909WR. Аналоги и основные параметры

Наименование производителя: BF909WR

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 7 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.04 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 3.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm

Тип корпуса: SOT343R

Аналог (замена) для BF909WR

- подборⓘ MOSFET транзистора по параметрам

 

BF909WR даташит

 ..1. Size:137K  philips
 bf909wr.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high f

 ..2. Size:132K  philips
 bf909wr 2.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor wit

 9.1. Size:118K  philips
 bf909 bf909r 01.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu

 9.2. Size:154K  philips
 bf909 bf909r 1.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BF904WR, BF905, BF908, BF908R, BF908WR, BF909, BF909A, BF909R, IRF520, BF910, BF960, BF960S, BF961, BF963, BF964, BF964S, BF965