All MOSFET. BF909WR Datasheet

 

BF909WR MOSFET. Datasheet pdf. Equivalent


   Type Designator: BF909WR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.2 W
   Maximum Drain-Source Voltage |Vds|: 7 V
   Maximum Drain Current |Id|: 0.04 A
   Maximum Junction Temperature (Tj): 150 °C
   Drain-Source Capacitance (Cd): 3.6 pF
   Maximum Drain-Source On-State Resistance (Rds): 100 Ohm
   Package: SOT343R

 BF909WR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF909WR Datasheet (PDF)

 ..1. Size:137K  philips
bf909wr.pdf

BF909WR
BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

 ..2. Size:132K  philips
bf909wr 2.pdf

BF909WR
BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit

 9.1. Size:118K  philips
bf909 bf909r 01.pdf

BF909WR
BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 9.2. Size:154K  philips
bf909 bf909r 1.pdf

BF909WR
BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 9.3. Size:320K  philips
bf909 r.pdf

BF909WR
BF909WR

BF909; BF909RN-channel dual gate MOS-FETsRev. 02 19 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown be

Datasheet: BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , AO3400 , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .

 

 
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