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BF909WR Spec and Replacement


   Type Designator: BF909WR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 7 V
   |Id| ⓘ - Maximum Drain Current: 0.04 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: SOT343R

 BF909WR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF909WR Specs

 ..1. Size:137K  philips
bf909wr.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high f... See More ⇒

 ..2. Size:132K  philips
bf909wr 2.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor wit... See More ⇒

 9.1. Size:118K  philips
bf909 bf909r 01.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu... See More ⇒

 9.2. Size:154K  philips
bf909 bf909r 1.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu... See More ⇒

Detailed specifications: BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , IRF520 , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .

Keywords - BF909WR MOSFET specs

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