BF909WR Datasheet. Specs and Replacement

Type Designator: BF909WR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.04 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm

Package: SOT343R

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BF909WR datasheet

 ..1. Size:137K  philips
 bf909wr.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high f... See More ⇒

 ..2. Size:132K  philips
 bf909wr 2.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor wit... See More ⇒

 9.1. Size:118K  philips
 bf909 bf909r 01.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu... See More ⇒

 9.2. Size:154K  philips
 bf909 bf909r 1.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu... See More ⇒

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Detailed specifications: BF904WR, BF905, BF908, BF908R, BF908WR, BF909, BF909A, BF909R, K3569, BF910, BF960, BF960S, BF961, BF963, BF964, BF964S, BF965

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