All MOSFET. BF909WR Datasheet

 

BF909WR Datasheet and Replacement


   Type Designator: BF909WR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 7 V
   |Id|ⓘ - Maximum Drain Current: 0.04 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: SOT343R
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BF909WR Datasheet (PDF)

 ..1. Size:137K  philips
bf909wr.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

 ..2. Size:132K  philips
bf909wr 2.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909WRN-channel dual-gate MOS-FET1997 Sep 05Product specificationSupersedes data of 1995 Apr 25File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF909WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor wit

 9.1. Size:118K  philips
bf909 bf909r 01.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

 9.2. Size:154K  philips
bf909 bf909r 1.pdf pdf_icon

BF909WR

DISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF909; BF909Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

Datasheet: BF904WR , BF905 , BF908 , BF908R , BF908WR , BF909 , BF909A , BF909R , 10N65 , BF910 , BF960 , BF960S , BF961 , BF963 , BF964 , BF964S , BF965 .

History: APT6025SVFRG | DMNH10H028SCT | WML11N80M3 | IXFR12N100Q | AM8820 | VS3640BC | IRLS4030

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