IRF8113 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF8113

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.9 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: SO8

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IRF8113 datasheet

 ..1. Size:218K  international rectifier
 irf8113pbf.pdf pdf_icon

IRF8113

PD - 95138B IRF8113PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltag

 ..2. Size:207K  international rectifier
 irf8113.pdf pdf_icon

IRF8113

PD - 94637A IRF8113 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking A A 1 8 Systems S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage

 0.1. Size:249K  international rectifier
 irf8113pbf-1.pdf pdf_icon

IRF8113

IRF8113PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 5.6 2 7 S D (@V = 10V) GS m 3 6 RDS(on) max S D 6.8 (@V = 4.5V) GS 4 5 G D Qg (typical) 24 nC SO-8 ID Top View 17.2 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH

 0.2. Size:286K  international rectifier
 irf8113gpbf.pdf pdf_icon

IRF8113

PD - 96251 IRF8113GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 l Lead-Free S D 2 7 l Halogen-Free S D 3 6 S D Benefits 4 5 G D l Very Low RDS(on) at 4.5V VGS l Low Gate Charge SO-8 Top

MOSTRAR MÁS

Otros transistores... IRF7842, IRF7853, IRF7854, IRF7855, IRF7862, IRF8010, IRF8010L, IRF8010S, AON7506, IRF8113G, IRF8252, IRF8302M, IRF8304M, IRF8306M, IRF8308M, IRF8327S, IRF8707