IRF8113 Specs and Replacement
Type Designator: IRF8113
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SO8
IRF8113 substitution
IRF8113 datasheet
irf8113pbf.pdf
PD - 95138B IRF8113PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltag... See More ⇒
irf8113.pdf
PD - 94637A IRF8113 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking A A 1 8 Systems S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage... See More ⇒
irf8113pbf-1.pdf
IRF8113PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 5.6 2 7 S D (@V = 10V) GS m 3 6 RDS(on) max S D 6.8 (@V = 4.5V) GS 4 5 G D Qg (typical) 24 nC SO-8 ID Top View 17.2 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH... See More ⇒
irf8113gpbf.pdf
PD - 96251 IRF8113GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 l Lead-Free S D 2 7 l Halogen-Free S D 3 6 S D Benefits 4 5 G D l Very Low RDS(on) at 4.5V VGS l Low Gate Charge SO-8 Top... See More ⇒
Detailed specifications: IRF7842 , IRF7853 , IRF7854 , IRF7855 , IRF7862 , IRF8010 , IRF8010L , IRF8010S , AON7506 , IRF8113G , IRF8252 , IRF8302M , IRF8304M , IRF8306M , IRF8308M , IRF8327S , IRF8707 .
Keywords - IRF8113 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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