IRFB3206G Todos los transistores

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IRFB3206G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB3206G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 210 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 120 nC

Resistencia drenaje-fuente RDS(on): 0.003 Ohm

Empaquetado / Estuche: TO220AB

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IRFB3206G Datasheet (PDF)

1.1. irfb3206gpbf.pdf Size:295K _upd-mosfet

IRFB3206G
IRFB3206G

PD - 96210 IRFB3206GPbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

2.1. irfb3206pbf.pdf Size:323K _upd-mosfet

IRFB3206G
IRFB3206G

IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D

 3.1. irfb3207zpbf.pdf Size:326K _upd-mosfet

IRFB3206G
IRFB3206G

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET® Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic

3.2. irfb3207pbf.pdf Size:387K _upd-mosfet

IRFB3206G
IRFB3206G

PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 3.3. irfb3207zgpbf.pdf Size:286K _upd-mosfet

IRFB3206G
IRFB3206G

PD - 96201 IRFB3207ZGPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

Otros transistores... IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , IRFB3077G , IRFB31N20D , IRFB3206 , IRF9540N , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z .

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