Справочник MOSFET. IRFB3206G

 

IRFB3206G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB3206G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 120 nC
   trⓘ - Время нарастания: 82 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRFB3206G

 

 

IRFB3206G Datasheet (PDF)

 ..1. Size:295K  international rectifier
 irfb3206gpbf.pdf

IRFB3206G IRFB3206G

PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 ..2. Size:295K  infineon
 irfb3206gpbf.pdf

IRFB3206G IRFB3206G

PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

 6.1. Size:323K  international rectifier
 irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

IRFB3206G IRFB3206G

IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

 6.2. Size:323K  infineon
 irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

IRFB3206G IRFB3206G

IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

 6.3. Size:246K  inchange semiconductor
 irfb3206.pdf

IRFB3206G IRFB3206G

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and Hi

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