All MOSFET. IRFB3206G Datasheet

 

IRFB3206G MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB3206G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 210 A

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm

Package: TO220AB

IRFB3206G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3206G Datasheet (PDF)

0.1. irfb3206gpbf.pdf Size:295K _international_rectifier

IRFB3206G
IRFB3206G

PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness

6.1. irfb3206pbf irfs3206pbf irfsl3206pbf.pdf Size:323K _international_rectifier

IRFB3206G
IRFB3206G

IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD

6.2. irfb3206.pdf Size:246K _inchange_semiconductor

IRFB3206G
IRFB3206G

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and Hi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top