IRFB3607 Datasheet. Equivalente

 ..1. Size:321K  international rectifier
 irfb3607pbf irfs3607pbf irfsl3607pbf.pdf

PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz

 ..2. Size:880K  cn minos
 irfb3607.pdf

80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R

 ..3. Size:261K  inchange semiconductor
 irfb3607.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:288K  international rectifier
 irfb3607gpbf.pdf

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval

 9.1. Size:292K  international rectifier
 irfb3306gpbf.pdf

PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged

 9.2. Size:245K  international rectifier
 irfb3006pbf.pdf

IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full

 9.3. Size:379K  international rectifier
 irfb3207 irfs3207 irfsl3207.pdf

PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn

 9.4. Size:243K  international rectifier
 irfb3307zgpbf.pdf

PD - 96212A IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. l Hard Switched and High Frequency Circuits 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Rugg

 9.5. Size:279K  international rectifier
 irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

 9.6. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av

 9.7. Size:295K  international rectifier
 irfb3206gpbf.pdf

PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 9.8. Size:279K  international rectifier
 irfb33n15dpbf irfs33n15dpbf.pdf

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

 9.9. Size:282K  international rectifier
 auirfb3207.pdf

PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified *

 9.10. Size:457K  international rectifier
 irfb3004pbf irfs3004pbf irfsl3004pbf.pdf

PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,

 9.11. Size:323K  international rectifier
 irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D

 9.12. Size:289K  international rectifier
 irfb3004gpbf.pdf

PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic dV/dt Rugged

 9.13. Size:243K  international rectifier
 irfb3407zpbf.pdf

IRFB3407ZPbF HEXFET Power MOSFET Applications VDSS 75V D l Battery Management RDS(on) typ. 5.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 6.4m G ID (Silicon Limited) 122A S Benefits ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced b

 9.14. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 9.15. Size:336K  international rectifier
 irfb38n20dpbf irfs38n20dpbf.pdf

PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De

 9.16. Size:286K  international rectifier
 irfb3207zgpbf.pdf

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

 9.17. Size:291K  international rectifier
 irfb3077gpbf.pdf

PD - 96200 IRFB3077GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (P

 9.18. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C

 9.19. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av

 9.20. Size:387K  international rectifier
 irfb3207pbf.pdf

PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 9.21. Size:142K  international rectifier
 irfb33n15d irfs33n15d irfsl33n15d.pdf

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

 9.22. Size:439K  international rectifier
 irfb3507pbf.pdf

PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S

 9.23. Size:430K  international rectifier
 irfb3507pbf irfs3507pbf irfsl3507pbf.pdf

PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S

 9.24. Size:295K  international rectifier
 irfb3077pbf.pdf

PD - 97047B IRFB3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A c l Improved Gate, Avalanche and Dynamic dV/

 9.25. Size:290K  international rectifier
 irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur

 9.26. Size:253K  international rectifier
 irfb3256pbf.pdf

PD - 97727 IRFB3256PbF HEXFET Power MOSFET D VDSS 60V RDS(on) typ. 2.7m Applications max. 3.4m l High Efficiency Synchronous Rectification in SMPS G ID (Silicon Limited) l Uninterruptible Power Supply 206A l High Speed Power Switching ID (Package Limited) 75A S l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugg

 9.27. Size:327K  international rectifier
 irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/

 9.28. Size:140K  international rectifier
 irfb3307pbf.pdf

PD - 95706C IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 5.0m l Hard Switched and High Frequency Circuits G max. 6.3m ID 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterize

 9.29. Size:288K  international rectifier
 irfb3006gpbf.pdf

PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 9.30. Size:330K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic

 9.31. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 9.32. Size:839K  blue-rocket-elect
 irfb3710.pdf

IRFB3710 Rev.E May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC convert

 9.33. Size:1055K  cn minos
 irfb3077.pdf

80V N-Channel Power MOSFET DESCRIPTION The IRFB3077 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 200A R

 9.34. Size:247K  inchange semiconductor
 irfb3004.pdf

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 FEATURES Static drain-source on-resistance RDS(on) 1.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched a

 9.35. Size:246K  inchange semiconductor
 irfb3207z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 9.36. Size:245K  inchange semiconductor
 irfb33n15d.pdf

isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15D FEATURES Static drain-source on-resistance RDS(on) 56m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.37. Size:245K  inchange semiconductor
 irfb3306.pdf

isc N-Channel MOSFET Transistor IRFB3306 IIRFB3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High efficiency synchronous rectification in SMPS Uninterrruptible power supply High speed pow

 9.38. Size:245K  inchange semiconductor
 irfb3407z.pdf

isc N-Channel MOSFET Transistor IRFB3407Z IIRFB3407Z FEATURES Static drain-source on-resistance RDS(on) 5.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.39. Size:246K  inchange semiconductor
 irfb3077.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3077 IIRFB3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 9.40. Size:246K  inchange semiconductor
 irfb3806.pdf

isc N-Channel MOSFET Transistor IRFB3806 IIRFB3806 FEATURES Static drain-source on-resistance RDS(on) 15.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for High speed power switching and high efficiency synchronous rectification in SMPS AB

 9.41. Size:246K  inchange semiconductor
 irfb3307z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307Z FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI

 9.42. Size:246K  inchange semiconductor
 irfb3206.pdf

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and Hi

 9.43. Size:245K  inchange semiconductor
 irfb3207zg.pdf

isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.44. Size:246K  inchange semiconductor
 irfb3006.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3006 IIRFB3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 9.45. Size:245K  inchange semiconductor
 irfb3307.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307 IIRFB3307 FEATURES Static drain-source on-resistance RDS(on) 6.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 9.46. Size:246K  inchange semiconductor
 irfb3207.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207 IIRFB3207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 9.47. Size:245K  inchange semiconductor
 irfb38n20d.pdf

isc N-Channel MOSFET Transistor IRFB38N20D IIRFB38N20D FEATURES Static drain-source on-resistance RDS(on) 54m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.48. Size:245K  inchange semiconductor
 irfb31n20d.pdf

isc N-Channel MOSFET Transistor IRFB31N20D IIRFB31N20D FEATURES Static drain-source on-resistance RDS(on) 82m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U