IRFB3607 PDF Specs and Replacement
The IRFB3607 is an N-channel power MOSFET designed for high-current, low-voltage switching applications. It features a typical drain-source voltage rating of 75V and very low Rds(on), enabling high efficiency and reduced conduction losses. The device is housed in a TO220 package, providing good thermal performance and ease of mounting. It is suitable for use in power supplies, motor drives, DC-DC converters, and automotive electronics. Advantages: low on-resistance, high continuous drain current capability, fast switching speed, good thermal robustness. Disadvantages: relatively high gate charge compared to small MOSFETs, sensitivity to ESD, limited voltage margin for high-voltage designs. Design and Repair Tips: ensure adequate gate drive voltage to fully enhance the channel, use proper heat sinking for high-current operation, add gate resistors to control switching noise, always check for shorted junctions when troubleshooting failures.
Type Designator: IRFB3607
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 280
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
IRFB3607 PDF Specs
..1. Size:321K international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf 
PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz... See More ⇒
..2. Size:880K cn minos
irfb3607.pdf
80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒
..3. Size:261K inchange semiconductor
irfb3607.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
0.1. Size:288K international rectifier
irfb3607gpbf.pdf
PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval... See More ⇒
9.1. Size:292K international rectifier
irfb3306gpbf.pdf
PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged... See More ⇒
9.2. Size:245K international rectifier
irfb3006pbf.pdf
IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full... See More ⇒
9.3. Size:379K international rectifier
irfb3207 irfs3207 irfsl3207.pdf
PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn... See More ⇒
9.4. Size:243K international rectifier
irfb3307zgpbf.pdf
PD - 96212A IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. l Hard Switched and High Frequency Circuits 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Rugg... See More ⇒
9.5. Size:279K international rectifier
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf
PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc... See More ⇒
9.6. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒
9.7. Size:295K international rectifier
irfb3206gpbf.pdf
PD - 96210 IRFB3206GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ... See More ⇒
9.8. Size:279K international rectifier
irfb33n15dpbf irfs33n15dpbf.pdf
PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc... See More ⇒
9.9. Size:282K international rectifier
auirfb3207.pdf
PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified * ... See More ⇒
9.10. Size:457K international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf
PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate, ... See More ⇒
9.11. Size:323K international rectifier
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D... See More ⇒
9.12. Size:289K international rectifier
irfb3004gpbf.pdf
PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic dV/dt Rugged... See More ⇒
9.13. Size:243K international rectifier
irfb3407zpbf.pdf
IRFB3407ZPbF HEXFET Power MOSFET Applications VDSS 75V D l Battery Management RDS(on) typ. 5.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 6.4m G ID (Silicon Limited) 122A S Benefits ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced b... See More ⇒
9.14. Size:290K international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒
9.15. Size:336K international rectifier
irfb38n20dpbf irfs38n20dpbf.pdf
PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De... See More ⇒
9.16. Size:286K international rectifier
irfb3207zgpbf.pdf
PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes... See More ⇒
9.17. Size:291K international rectifier
irfb3077gpbf.pdf
PD - 96200 IRFB3077GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (P... See More ⇒
9.18. Size:564K international rectifier
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C... See More ⇒
9.19. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒
9.20. Size:387K international rectifier
irfb3207pbf.pdf
PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized ... See More ⇒
9.21. Size:142K international rectifier
irfb33n15d irfs33n15d irfsl33n15d.pdf
PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T... See More ⇒
9.22. Size:439K international rectifier
irfb3507pbf.pdf
PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S ... See More ⇒
9.23. Size:430K international rectifier
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf
PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S ... See More ⇒
9.24. Size:295K international rectifier
irfb3077pbf.pdf
PD - 97047B IRFB3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A c l Improved Gate, Avalanche and Dynamic dV/... See More ⇒
9.25. Size:290K international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒
9.26. Size:253K international rectifier
irfb3256pbf.pdf
PD - 97727 IRFB3256PbF HEXFET Power MOSFET D VDSS 60V RDS(on) typ. 2.7m Applications max. 3.4m l High Efficiency Synchronous Rectification in SMPS G ID (Silicon Limited) l Uninterruptible Power Supply 206A l High Speed Power Switching ID (Package Limited) 75A S l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugg... See More ⇒
9.27. Size:327K international rectifier
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/... See More ⇒
9.28. Size:140K international rectifier
irfb3307pbf.pdf
PD - 95706C IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 5.0m l Hard Switched and High Frequency Circuits G max. 6.3m ID 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterize... See More ⇒
9.29. Size:288K international rectifier
irfb3006gpbf.pdf
PD - 96238 IRFB3006GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ... See More ⇒
9.30. Size:330K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf
IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic... See More ⇒
9.31. Size:583K infineon
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D ... See More ⇒
9.32. Size:839K blue-rocket-elect
irfb3710.pdf
IRFB3710 Rev.E May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC convert... See More ⇒
9.33. Size:1055K cn minos
irfb3077.pdf
80V N-Channel Power MOSFET DESCRIPTION The IRFB3077 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 200A R ... See More ⇒
9.34. Size:247K inchange semiconductor
irfb3004.pdf
isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 FEATURES Static drain-source on-resistance RDS(on) 1.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched a... See More ⇒
9.35. Size:246K inchange semiconductor
irfb3207z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207Z IIRFB3207Z FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒
9.36. Size:245K inchange semiconductor
irfb33n15d.pdf
isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15D FEATURES Static drain-source on-resistance RDS(on) 56m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
9.37. Size:245K inchange semiconductor
irfb3306.pdf
isc N-Channel MOSFET Transistor IRFB3306 IIRFB3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High efficiency synchronous rectification in SMPS Uninterrruptible power supply High speed pow... See More ⇒
9.38. Size:245K inchange semiconductor
irfb3407z.pdf
isc N-Channel MOSFET Transistor IRFB3407Z IIRFB3407Z FEATURES Static drain-source on-resistance RDS(on) 5.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
9.39. Size:246K inchange semiconductor
irfb3077.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3077 IIRFB3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM... See More ⇒
9.40. Size:246K inchange semiconductor
irfb3806.pdf
isc N-Channel MOSFET Transistor IRFB3806 IIRFB3806 FEATURES Static drain-source on-resistance RDS(on) 15.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for High speed power switching and high efficiency synchronous rectification in SMPS AB... See More ⇒
9.41. Size:246K inchange semiconductor
irfb3307z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307Z FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI... See More ⇒
9.42. Size:246K inchange semiconductor
irfb3206.pdf
isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and Hi... See More ⇒
9.43. Size:245K inchange semiconductor
irfb3207zg.pdf
isc N-Channel MOSFET Transistor IRFB3207ZG IIRFB3207ZG FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
9.44. Size:246K inchange semiconductor
irfb3006.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3006 IIRFB3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒
9.45. Size:245K inchange semiconductor
irfb3307.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307 IIRFB3307 FEATURES Static drain-source on-resistance RDS(on) 6.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒
9.46. Size:246K inchange semiconductor
irfb3207.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207 IIRFB3207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒
9.47. Size:245K inchange semiconductor
irfb38n20d.pdf
isc N-Channel MOSFET Transistor IRFB38N20D IIRFB38N20D FEATURES Static drain-source on-resistance RDS(on) 54m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
9.48. Size:245K inchange semiconductor
irfb31n20d.pdf
isc N-Channel MOSFET Transistor IRFB31N20D IIRFB31N20D FEATURES Static drain-source on-resistance RDS(on) 82m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: IRFB3256
, IRFB3306
, IRFB3306G
, IRFB3307
, IRFB3307Z
, IRFB3307ZG
, IRFB33N15D
, IRFB3507
, MMIS60R580P
, IRFB3607G
, IRFB3806
, IRFB38N20D
, IRFB4019
, IRFB4020
, IRFB4110
, IRFB4110G
, IRFB4110Q
.
Keywords - IRFB3607 MOSFET specs
IRFB3607 cross reference
IRFB3607 equivalent finder
IRFB3607 pdf lookup
IRFB3607 substitution
IRFB3607 replacement
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