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IRFB3607G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB3607G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente |Vds|: 75 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 56 nC

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Paquete / Caja (carcasa): TO220AB

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IRFB3607G Datasheet (PDF)

..1. irfb3607gpbf.pdf Size:288K _international_rectifier

IRFB3607G
IRFB3607G

PD - 96329IRFB3607GPbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAval

6.1. irfb3607pbf irfs3607pbf irfsl3607pbf.pdf Size:321K _international_rectifier

IRFB3607G
IRFB3607G

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

6.2. irfb3607pbf irfs3607pbf irfsl3607pbf.pdf Size:321K _infineon

IRFB3607G
IRFB3607G

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.3. irfb3607.pdf Size:261K _inchange_semiconductor

IRFB3607G
IRFB3607G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3607FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , CS7N65F , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 .

 

 
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