IRFB3607G Todos los transistores

 

IRFB3607G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3607G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB3607G PDF Specs

 ..1. Size:288K  international rectifier
 irfb3607gpbf.pdf pdf_icon

IRFB3607G

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval... See More ⇒

 6.1. Size:321K  international rectifier
 irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

IRFB3607G

PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz... See More ⇒

 6.2. Size:880K  cn minos
 irfb3607.pdf pdf_icon

IRFB3607G

80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒

 6.3. Size:261K  inchange semiconductor
 irfb3607.pdf pdf_icon

IRFB3607G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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Otros transistores... IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , AOD4184A , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 .

 

 
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