All MOSFET. IRFB3607G Datasheet

 

IRFB3607G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB3607G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220AB

 IRFB3607G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3607G Datasheet (PDF)

 ..1. Size:288K  international rectifier
 irfb3607gpbf.pdf

IRFB3607G IRFB3607G

PD - 96329IRFB3607GPbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDl Fully Characterized Capacitance andAval

 6.1. Size:321K  international rectifier
 irfb3607pbf irfs3607pbf irfsl3607pbf.pdf

IRFB3607G IRFB3607G

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.2. Size:321K  infineon
 irfb3607pbf irfs3607pbf irfsl3607pbf.pdf

IRFB3607G IRFB3607G

PD - 97308CIRFB3607PbFIRFS3607PbFApplicationsIRFSL3607PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDl High Speed Power Switching VDSS 75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.7.34mG max. 9.0mBenefitsID 80ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characteriz

 6.3. Size:261K  inchange semiconductor
 irfb3607.pdf

IRFB3607G IRFB3607G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3607FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBK162K

 

 
Back to Top