IRFB3607G PDF and Equivalents Search

 

IRFB3607G Specs and Replacement

Type Designator: IRFB3607G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 280 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220AB

IRFB3607G substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFB3607G datasheet

 ..1. Size:288K  international rectifier
irfb3607gpbf.pdf pdf_icon

IRFB3607G

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval... See More ⇒

 6.1. Size:321K  international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

IRFB3607G

PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz... See More ⇒

 6.2. Size:880K  cn minos
irfb3607.pdf pdf_icon

IRFB3607G

80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒

 6.3. Size:261K  inchange semiconductor
irfb3607.pdf pdf_icon

IRFB3607G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

Detailed specifications: IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG , IRFB33N15D , IRFB3507 , IRFB3607 , AOD4184A , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRFB4115 .

History: AP50P06T

Keywords - IRFB3607G MOSFET specs

 IRFB3607G cross reference
 IRFB3607G equivalent finder
 IRFB3607G pdf lookup
 IRFB3607G substitution
 IRFB3607G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
↑ Back to Top
.