IRFB3607G Datasheet. Specs and Replacement

Type Designator: IRFB3607G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220AB

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IRFB3607G substitution

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IRFB3607G datasheet

 ..1. Size:288K  international rectifier
 irfb3607gpbf.pdf pdf_icon

IRFB3607G

PD - 96329 IRFB3607GPbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Aval... See More ⇒

 6.1. Size:321K  international rectifier
 irfb3607pbf irfs3607pbf irfsl3607pbf.pdf pdf_icon

IRFB3607G

PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz... See More ⇒

 6.2. Size:880K  cn minos
 irfb3607.pdf pdf_icon

IRFB3607G

80V N-Channel Power MOSFET DESCRIPTION The IRFB3607 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒

 6.3. Size:261K  inchange semiconductor
 irfb3607.pdf pdf_icon

IRFB3607G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3607 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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Detailed specifications: IRFB3306, IRFB3306G, IRFB3307, IRFB3307Z, IRFB3307ZG, IRFB33N15D, IRFB3507, IRFB3607, 75N75, IRFB3806, IRFB38N20D, IRFB4019, IRFB4020, IRFB4110, IRFB4110G, IRFB4110Q, IRFB4115

Keywords - IRFB3607G MOSFET specs

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