IRFB4115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB4115
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 380 W
Tensión drenaje-fuente |Vds|: 150 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 104 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 5 V
Carga de compuerta (Qg): 77 nC
Tiempo de elevación (tr): 73 nS
Conductancia de drenaje-sustrato (Cd): 490 pF
Resistencia drenaje-fuente RDS(on): 0.011 Ohm
Paquete / Caja (carcasa): TO220AB
Búsqueda de reemplazo de MOSFET IRFB4115
IRFB4115 Datasheet (PDF)
..1. irfb4115pbf.pdf 
Size:231K _international_rectifier
PD - 97354BIRFB4115PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Ca
..2. irfb4115pbf.pdf Size:336K _infineon
IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita
..3. irfb4115.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM
0.1. irfb4115gpbf.pdf Size:312K _international_rectifier
PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize
0.2. irfb4115g.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU
7.1. irfb4110qpbf.pdf Size:306K _international_rectifier
PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an
7.2. irfb4110gpbf.pdf Size:303K _international_rectifier
PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl
7.3. irfb4110pbf.pdf Size:237K _international_rectifier
PD - 97061DIRFB4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl
7.4. irfb4110pbf.pdf Size:341K _infineon
IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness
7.5. irfb4110.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irfb4110g.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... IRFB3607G , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRF1404 , IRFB4115G , IRFB4127 , IRFB41N15D , IRFB4212 , IRFB4227 , IRFB4229 , IRFB4233 , IRFB42N20D .
