IRFB4115 Todos los transistores

 ..1. Size:336K  international rectifier
 irfb4115pbf.pdf

IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita

 ..2. Size:245K  inchange semiconductor
 irfb4115.pdf

isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 0.1. Size:312K  international rectifier
 irfb4115gpbf.pdf

PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

 0.2. Size:245K  inchange semiconductor
 irfb4115g.pdf

isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU

 7.1. Size:303K  international rectifier
 irfb4110gpbf.pdf

PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 7.2. Size:341K  international rectifier
 irfb4110pbf.pdf

IRFB4110PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.7m l High Speed Power Switching max. 4.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 180A S ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness

 7.3. Size:306K  international rectifier
 irfb4110qpbf.pdf

PD - 96138 IRFB4110QPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits l Lead-Free max 4.5m ID 180A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness D l Fully Characterized Capacitance an

 7.4. Size:809K  cn evvo
 irfb4110.pdf

IRFB4110 100 V N-Channel MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l

 7.5. Size:1046K  cn minos
 irfb4110.pdf

100V N-Channel Power MOSFET DESCRIPTION The IRFB4110 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R

 7.6. Size:245K  inchange semiconductor
 irfb4110.pdf

isc N-Channel MOSFET Transistor IRFB4110 IIRFB4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 7.7. Size:245K  inchange semiconductor
 irfb4110g.pdf

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110G FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a