IRFB4115 Spec and Replacement
The IRFB4115 is a high-performance N-channel power MOSFET designed for applications requiring efficient switching and low conduction losses. Built on advanced technology, it features a typical drain-source on-resistance of about 11mΩ and supports a maximum drain-source voltage 150V. Its continuous drain current reaches 104A at 25 °C, making it suitable for high-current, high-efficiency power stages. With a fast switching profile and low gate charge, the IRFB4115 minimizes switching losses in PWM-driven systems such as DC-DC converters, motor controllers, high-power inverters. The TO220 package provides robust thermal performance, allowing efficient heat dissipation when mounted to a heatsink. The IRFB4115 delivers a strong balance of ruggedness, low Rds(on), thermal reliability, making it a dependable choice for demanding power-electronics designs.
Type Designator: IRFB4115
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 380
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 104
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 73
nS
Cossⓘ -
Output Capacitance: 490
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package: TO220AB
IRFB4115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB4115 Specs
irfb4115pbf.pdf
IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita... See More ⇒
irfb4115.pdf
isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM ... See More ⇒
irfb4115gpbf.pdf
PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize... See More ⇒
irfb4115g.pdf
isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: IRFB3607G , IRFB3806 , IRFB38N20D , IRFB4019 , IRFB4020 , IRFB4110 , IRFB4110G , IRFB4110Q , IRF740 , IRFB4115G , IRFB4127 , IRFB41N15D , IRFB4212 , IRFB4227 , IRFB4229 , IRFB4233 , IRFB42N20D .
History: HSP80P10
Keywords - IRFB4115 MOSFET specs
IRFB4115 cross reference
IRFB4115 equivalent finder
IRFB4115 lookup
IRFB4115 substitution
IRFB4115 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
