IRFB4115 Datasheet. Specs and Replacement
The IRFB4115 is a high-performance N-channel power MOSFET designed for applications requiring efficient switching and low conduction losses. Built on advanced technology, it features a typical drain-source on-resistance of about 11mΩ and supports a maximum drain-source voltage 150V. Its continuous drain current reaches 104A at 25 °C, making it suitable for high-current, high-efficiency power stages. With a fast switching profile and low gate charge, the IRFB4115 minimizes switching losses in PWM-driven systems such as DC-DC converters, motor controllers, high-power inverters. The TO220 package provides robust thermal performance, allowing efficient heat dissipation when mounted to a heatsink. The IRFB4115 delivers a strong balance of ruggedness, low Rds(on), thermal reliability, making it a dependable choice for demanding power-electronics designs.
Type Designator: IRFB4115 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 104 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220AB
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IRFB4115 substitution
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IRFB4115 datasheet
irfb4115pbf.pdf
IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita... See More ⇒
irfb4115.pdf
isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM ... See More ⇒
irfb4115gpbf.pdf
PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize... See More ⇒
irfb4115g.pdf
isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: IRFB3607G, IRFB3806, IRFB38N20D, IRFB4019, IRFB4020, IRFB4110, IRFB4110G, IRFB4110Q, IRF740, IRFB4115G, IRFB4127, IRFB41N15D, IRFB4212, IRFB4227, IRFB4229, IRFB4233, IRFB42N20D
Keywords - IRFB4115 MOSFET specs
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