IRFB4227 Todos los transistores

 

IRFB4227 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB4227
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB4227 Datasheet (PDF)

 ..1. Size:284K  international rectifier
 irfb4227pbf.pdf pdf_icon

IRFB4227

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

 ..2. Size:244K  inchange semiconductor
 irfb4227.pdf pdf_icon

IRFB4227

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 7.1. Size:292K  international rectifier
 irfb4229pbf.pdf pdf_icon

IRFB4227

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

 7.2. Size:292K  international rectifier
 irfb4228pbf.pdf pdf_icon

IRFB4227

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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