IRFB4227 Todos los transistores

 

IRFB4227 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFB4227

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 65 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 70 nC

Resistencia drenaje-fuente RDS(on): 0.026 Ohm

Empaquetado / Estuche: TO220AB

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IRFB4227 Datasheet (PDF)

1.1. irfb4227pbf.pdf Size:284K _upd-mosfet

IRFB4227
IRFB4227

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications TJ max 17

1.2. irfb4227.pdf Size:244K _inchange_semiconductor

IRFB4227
IRFB4227

isc N-Channel MOSFET Transistor IRFB4227,IIRFB4227 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

 3.1. irfb4229pbf.pdf Size:292K _upd-mosfet

IRFB4227
IRFB4227

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C and Pass Switch Applications 91 A l Low QG f

3.2. irfb4228pbf.pdf Size:292K _upd-mosfet

IRFB4227
IRFB4227

PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 170 A and Pass Switch Application

 3.3. irfb4228.pdf Size:245K _inchange_semiconductor

IRFB4227
IRFB4227

isc N-Channel MOSFET Transistor IRFB4228,IIRFB4228 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

3.4. irfb4229.pdf Size:245K _inchange_semiconductor

IRFB4227
IRFB4227

isc N-Channel MOSFET Transistor IRFB4229,IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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