IRFB4227 Spec and Replacement
The IRFB4227 is an N-channel MOSFET designed for high-efficiency switching applications. It features a low RDS(on) of 0.024 Ohm and a high current rating of 65A, making it ideal for power management in DC-DC converters, motor drives, inverters. With a maximum voltage of 200V and fast switching capability, it ensures minimal losses and reliable thermal performance in demanding electronic circuits.
Type Designator: IRFB4227
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 330
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id| ⓘ - Maximum Drain Current: 65
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 70
nC
tr ⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 460
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package: TO220AB
IRFB4227 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB4227 Specs
irfb4227pbf.pdf
PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 17... See More ⇒
irfb4227.pdf
IRFB4227 Silicon N-Channel Power MOSFET Description The IRFB4227 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =200V,I =65A DS D R 20m @V =10V (Typ 20m ) dson GS R 25m @V =4.5V (Typ 25m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Sin... See More ⇒
irfb4227.pdf
isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227 FEATURES Static drain-source on-resistance RDS(on) 24m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM... See More ⇒
irfb4229pbf.pdf
PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG f... See More ⇒
Detailed specifications: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF630 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - IRFB4227 MOSFET specs
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