IRFB4227 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB4227
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: TO220AB
IRFB4227 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB4227 Datasheet (PDF)
..1. irfb4227pbf.pdf 
Size:284K _international_rectifier
PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17
..2. irfb4227pbf.pdf Size:284K _infineon
PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17
..3. irfb4227.pdf Size:244K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM
7.1. irfb4229pbf.pdf Size:292K _international_rectifier
PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f
7.2. irfb4228pbf.pdf Size:292K _international_rectifier
PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application
7.3. irfb4229pbf.pdf Size:292K _infineon
PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f
7.4. irfb4228pbf.pdf Size:292K _infineon
PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application
7.5. irfb4228.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4228IIRFB4228FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM
7.6. irfb4229.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4229IIRFB4229FEATURESStatic drain-source on-resistance:RDS(on) 46mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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