IRFB4227 MOSFET Datasheet: N-Ch, 200V, 65A. Full specification with pinout and replacement list

IRFB4227 Specs and Replacement

The IRFB4227 is an N-channel MOSFET designed for high-efficiency switching applications. It features a low R_DS(on) of 0.024 Ohm and a high current rating of 65A, making it ideal for power management in DC-DC converters, motor drives, inverters. With a maximum voltage of 200V and fast switching capability, it ensures minimal losses and reliable thermal performance in demanding electronic circuits.

   Type Designator: IRFB4227
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO220AB

IRFB4227 substitution

- MOSFET ⓘ Cross-Reference Search

IRFB4227 datasheet

..1. Size:284K international rectifier
irfb4227pbf.pdf pdf_icon

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 17... See More ⇒

..2. Size:551K cn minos
irfb4227.pdf pdf_icon

IRFB4227 Silicon N-Channel Power MOSFET Description The IRFB4227 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =200V,I =65A DS D R 20m @V =10V (Typ 20m ) dson GS R 25m @V =4.5V (Typ 25m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Sin... See More ⇒

..3. Size:244K inchange semiconductor
irfb4227.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227 FEATURES Static drain-source on-resistance RDS(on) 24m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM... See More ⇒

7.1. Size:292K international rectifier
irfb4229pbf.pdf pdf_icon

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG f... See More ⇒