All MOSFET. IRFB4227 Datasheet

 

IRFB4227 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4227

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 65 A

Total Gate Charge (Qg): 70 nC

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO220AB

IRFB4227 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4227 Datasheet (PDF)

0.1. irfb4227pbf.pdf Size:284K _international_rectifier

IRFB4227
IRFB4227

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

0.2. irfb4227pbf.pdf Size:284K _infineon

IRFB4227
IRFB4227

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

 0.3. irfb4227.pdf Size:244K _inchange_semiconductor

IRFB4227
IRFB4227

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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