IRFH5006 Todos los transistores

 

IRFH5006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
   Paquete / Cubierta: PQFN5X6
 

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IRFH5006 Datasheet (PDF)

 ..1. Size:263K  international rectifier
 irfh5006pbf.pdf pdf_icon

IRFH5006

IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses

 0.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5006

IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses

 7.1. Size:259K  international rectifier
 irfh5004pbf.pdf pdf_icon

IRFH5006

IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL

 7.2. Size:268K  international rectifier
 irfh5007pbf.pdf pdf_icon

IRFH5006

IRFH5007PbFHEXFET Power MOSFETVDS 75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical) 65 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFB61N15D , IRFB812 , IRFBA1404P , IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , SPP20N60C3 , IRFH5007 , IRFH5010 , IRFH5015 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 .

History: IPP041N04NG | NCE2312A

 

 
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