IRFH5006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5006
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 69 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5006
IRFH5006 Datasheet (PDF)
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5006pbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5006trpbf.pdf
IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5007pbf.pdf
PD -95958IRFH5007PbFHEXFET Power MOSFETVDS75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID 100 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m)
irfh5004pbf.pdf
IRFH5004PbFHEXFET Power MOSFETVDS 40 VRDS(on) max 2.6 m(@VGS = 10V)Qg (typical) 73 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 2.6m) Lower Conduction LossesL
irfh5007pbf.pdf
IRFH5007PbFHEXFET Power MOSFETVDS 75 VRDS(on) max 5.9 m(@VGS = 10V)Qg (typical) 65 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 5.9m) Lower Conduction Losses
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: GKI07301 | IXTA14N60P
History: GKI07301 | IXTA14N60P
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918