IRFH5006 Todos los transistores

 

IRFH5006 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
   Paquete / Cubierta: PQFN5X6
 

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IRFH5006 datasheet

 ..1. Size:263K  international rectifier
 irfh5006pbf.pdf pdf_icon

IRFH5006

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

 0.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5006

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

 7.1. Size:259K  international rectifier
 irfh5004pbf.pdf pdf_icon

IRFH5006

IRFH5004PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 2.6 m (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 2.6m ) Lower Conduction Losses L

 7.2. Size:268K  international rectifier
 irfh5007pbf.pdf pdf_icon

IRFH5006

IRFH5007PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 5.9 m (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 5.9m ) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFB61N15D , IRFB812 , IRFBA1404P , IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , K3569 , IRFH5007 , IRFH5010 , IRFH5015 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 .

 

 
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