IRFH5006 Todos los transistores

 

IRFH5006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5006

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 67 nC

Resistencia drenaje-fuente RDS(on): 0.0041 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5006 Datasheet (PDF)

1.1. irfh5006pbf.pdf Size:277K _international_rectifier

IRFH5006
IRFH5006

IRFH5006PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 4.1 mΩ (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 4.1mΩ) Lower Conduction Losses

3.1. irfh5007pbf.pdf Size:332K _upd-mosfet

IRFH5006
IRFH5006

PD -95958 IRFH5007PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 5.9 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ)

3.2. irfh5007pbf.pdf Size:277K _international_rectifier

IRFH5006
IRFH5006

IRFH5007PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 5.9 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ) Lower Conduction Losses

 3.3. irfh5004pbf.pdf Size:273K _international_rectifier

IRFH5006
IRFH5006

IRFH5004PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 2.6 mΩ (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 2.6mΩ) Lower Conduction Losses L

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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