IRFH5006 PDF and Equivalents Search

 

IRFH5006 Specs and Replacement

Type Designator: IRFH5006

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: PQFN5X6

IRFH5006 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFH5006 datasheet

 ..1. Size:263K  international rectifier
 irfh5006pbf.pdf pdf_icon

IRFH5006

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses ... See More ⇒

 0.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5006

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses ... See More ⇒

 7.1. Size:259K  international rectifier
 irfh5004pbf.pdf pdf_icon

IRFH5006

IRFH5004PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 2.6 m (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 2.6m ) Lower Conduction Losses L... See More ⇒

 7.2. Size:268K  international rectifier
 irfh5007pbf.pdf pdf_icon

IRFH5006

IRFH5007PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 5.9 m (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 5.9m ) Lower Conduction Losses ... See More ⇒

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Detailed specifications: IRFB61N15D, IRFB812, IRFBA1404P, IRFBA1405P, IRFBA90N20D, IRFH3702, IRFH3707, IRFH5004, K3569, IRFH5007, IRFH5010, IRFH5015, IRFH5020, IRFH5025, IRFH5053, IRFH5104, IRFH5106

Keywords - IRFH5006 MOSFET specs

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