IRFH5006 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFH5006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.6 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm
Package: PQFN5X6
IRFH5006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFH5006 说明书
1.1. irfh5006pbf.pdf 
Size:277K _international_rectifier
IRFH5006PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 4.1 mΩ (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 4.1mΩ) Lower Conduction Losses
3.1. irfh5007pbf.pdf Size:277K _international_rectifier
IRFH5007PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 5.9 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ) Lower Conduction Losses
3.2. irfh5004pbf.pdf Size:273K _international_rectifier
IRFH5004PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 2.6 mΩ (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 2.6mΩ) Lower Conduction Losses L
Datasheet: IRFB61N15D , IRFB812 , IRFBA1404P , IRFBA1405P , IRFBA90N20D , IRFH3702 , IRFH3707 , IRFH5004 , IRF9540 , IRFH5007 , IRFH5010 , IRFH5015 , IRFH5020 , IRFH5025 , IRFH5053 , IRFH5104 , IRFH5106 .
