IRFP260N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP260N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 49 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 156 nC

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO247AC

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IRFP260N Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp260n.pdf Size:122K _international_rectifier

PD - 94004A IRFP260N HEXFET� Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175�C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

3.1. irfp260pbf.pdf Size:1340K _upd-mosfet

PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery

3.2. irfp260mpbf.pdf Size:634K _upd-mosfet

PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

3.3. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915 IRFP260PbF � Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery dv/dt

3.4. irfp260.pdf Size:168K _international_rectifier

3.5. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 200 Available � Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.055 RoHS* � Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT � Fast Switching Qgs (nC) 42 � Ease of Paralleling Qgd (nC) 110 � Simple Drive Requirements Configuration Single � Compliant to RoHS Dire

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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