IRFP260N Todos los transistores

 

IRFP260N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP260N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 49 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 156 nC

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO247AC

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IRFP260N Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

IRFP260N
IRFP260N

PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp260n.pdf Size:122K _international_rectifier

IRFP260N
IRFP260N

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 1.3. irfp260n.pdf Size:242K _inchange_semiconductor

IRFP260N
IRFP260N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N,IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VAL

1.4. irfp260npbf.pdf Size:212K _inchange_semiconductor

IRFP260N
IRFP260N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

Otros transistores... IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , IRFP260M , APT50M38JFLL , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 .

 

 
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