IRFP260N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP260N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 49 A
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO247AC
IRFP260N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP260N Datasheet (PDF)
1.1. irfp260npbf.pdf 
Size:180K _upd-mosfet
PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni
1.2. irfp260n.pdf Size:122K _international_rectifier
PD - 94004A IRFP260N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
3.1. irfp260pbf.pdf Size:1340K _upd-mosfet
PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery
3.2. irfp260mpbf.pdf Size:634K _upd-mosfet
PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq
3.3. irfp260pbf.pdf Size:1340K _international_rectifier
PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery dv/dt
3.4. irfp260.pdf Size:168K _international_rectifier
3.5. irfp260 sihfp260.pdf Size:1762K _vishay
IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.055 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT • Fast Switching Qgs (nC) 42 • Ease of Paralleling Qgd (nC) 110 • Simple Drive Requirements Configuration Single • Compliant to RoHS Dire
Datasheet: IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , IRFP260M , APT50M38JFLL , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 .
