All MOSFET. IRFP260N Equivalents Search

 

IRFP260N Spec and Replacement

The IRFP260N is an N-channel power MOSFET designed for high-current, high-voltage applications. It features a low R_DS(on) of 0.04 Ω, allowing efficient switching with minimal heat generation. With a maximum drain-source voltage of 200 V and continuous drain current up to 50 A, it suits power supplies, motor drivers, and inverters. The device’s fast switching capability reduces losses in high-frequency circuits. Its robust thermal performance, combined with a TO-247 package, ensures reliable operation under demanding conditions. Proper gate drive is essential to maximize efficiency and prevent overheating.


   Type Designator: IRFP260N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 603 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247AC

 IRFP260N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP260N Specs

 ..1. Size:180K  international rectifier
 irfp260npbf.pdf pdf_icon

IRFP260N

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 ..2. Size:122K  international rectifier
 irfp260n.pdf pdf_icon

IRFP260N

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 ..3. Size:594K  cn minos
 irfp260n.pdf pdf_icon

IRFP260N

Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R ... See More ⇒

 ..4. Size:212K  inchange semiconductor
 irfp260npbf.pdf pdf_icon

IRFP260N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

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Detailed specifications: IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , IRFP260M , IRF730 , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 .

Keywords - IRFP260N MOSFET specs

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