IRFP260N MOSFET Datasheet: N-Ch, 200V, 50A. Full specification with pinout and replacement list

IRFP260N Specs and Replacement

The IRFP260N is an N-channel power MOSFET designed for high-current, high-voltage applications. It features a low R_DS(on) of 0.04 Ω, allowing efficient switching with minimal heat generation. With a maximum drain-source voltage of 200 V and continuous drain current up to 50 A, it suits power supplies, motor drivers, and inverters. The device’s fast switching capability reduces losses in high-frequency circuits. Its robust thermal performance, combined with a TO-247 package, ensures reliable operation under demanding conditions. Proper gate drive is essential to maximize efficiency and prevent overheating.

Type Designator: IRFP260N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 603 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247AC

IRFP260N substitution

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IRFP260N datasheet

..1. Size:180K international rectifier
irfp260npbf.pdf pdf_icon

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

..2. Size:122K international rectifier
irfp260n.pdf pdf_icon

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

..3. Size:594K cn minos
irfp260n.pdf pdf_icon

Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R ... See More ⇒

..4. Size:212K inchange semiconductor
irfp260npbf.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒