Справочник MOSFET. IRFP260N

 

IRFP260N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP260N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 234 nC
   Время нарастания (tr): 60 ns
   Выходная емкость (Cd): 603 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP260N

 

 

IRFP260N Datasheet (PDF)

 ..1. Size:180K  international rectifier
irfp260npbf.pdf

IRFP260N
IRFP260N

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

 ..2. Size:122K  international rectifier
irfp260n.pdf

IRFP260N
IRFP260N

PD - 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

 ..3. Size:180K  infineon
irfp260npbf.pdf

IRFP260N
IRFP260N

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

 ..4. Size:212K  inchange semiconductor
irfp260npbf.pdf

IRFP260N
IRFP260N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 ..5. Size:242K  inchange semiconductor
irfp260n.pdf

IRFP260N
IRFP260N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 7.1. Size:1340K  international rectifier
irfp260pbf.pdf

IRFP260N
IRFP260N

PD- 95915IRFP260PbF Lead-Free9/27/04Document Number: 91215 www.vishay.com1IRFP260PbFDocument Number: 91215 www.vishay.com2IRFP260PbFDocument Number: 91215 www.vishay.com3IRFP260PbFDocument Number: 91215 www.vishay.com4IRFP260PbFDocument Number: 91215 www.vishay.com5IRFP260PbFDocument Number: 91215 www.vishay.com6IRFP260PbFPeak Diode Recovery

 7.2. Size:207K  international rectifier
auirfp2602.pdf

IRFP260N
IRFP260N

PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description

 7.3. Size:168K  international rectifier
irfp260.pdf

IRFP260N
IRFP260N

 7.4. Size:634K  international rectifier
irfp260mpbf.pdf

IRFP260N
IRFP260N

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 7.5. Size:1762K  vishay
irfp260 sihfp260.pdf

IRFP260N
IRFP260N

IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp

 7.6. Size:634K  infineon
irfp260mpbf.pdf

IRFP260N
IRFP260N

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 7.7. Size:247K  inchange semiconductor
irfp260m.pdf

IRFP260N
IRFP260N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

 7.8. Size:399K  inchange semiconductor
irfp260.pdf

IRFP260N
IRFP260N

iscN-Channel MOSFET Transistor IRFP260FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , IRFP260M , 4N65 , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 .

 

 
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