Справочник MOSFET. IRFP260N

 

IRFP260N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP260N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 49 A

Общий заряд затвора (Qg): 156 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm

Тип корпуса: TO247AC

Аналог (замена) для IRFP260N

 

 

IRFP260N Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

IRFP260N
IRFP260N

PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp260n.pdf Size:122K _international_rectifier

IRFP260N
IRFP260N

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 3.1. irfp260pbf.pdf Size:1340K _upd-mosfet

IRFP260N
IRFP260N

PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery

3.2. irfp260mpbf.pdf Size:634K _upd-mosfet

IRFP260N
IRFP260N

PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 3.3. irfp260pbf.pdf Size:1340K _international_rectifier

IRFP260N
IRFP260N

PD- 95915 IRFP260PbF Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery dv/dt

3.4. irfp260.pdf Size:168K _international_rectifier

IRFP260N
IRFP260N

 3.5. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260N
IRFP260N

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compliant to RoHS Dire

Другие MOSFET... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |
 

 

 

 

 

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