Справочник MOSFET. IRFP260N

 

IRFP260N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP260N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 49 A

Общий заряд затвора (Qg): 156 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm

Тип корпуса: TO247AC

Аналог (замена) для IRFP260N

 

 

IRFP260N Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

IRFP260N
IRFP260N

PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp260n.pdf Size:122K _international_rectifier

IRFP260N
IRFP260N

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 1.3. irfp260n.pdf Size:242K _inchange_semiconductor

IRFP260N
IRFP260N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N,IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VAL

1.4. irfp260npbf.pdf Size:212K _inchange_semiconductor

IRFP260N
IRFP260N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

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