IRFP3703 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP3703
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 210 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 123 nS
Cossⓘ - Capacitancia de salida: 3000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: TO247AC
Búsqueda de reemplazo de IRFP3703 MOSFET
IRFP3703 Datasheet (PDF)
irfp3703pbf.pdf

PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1
irfp3703.pdf

PD - 93917AIRFP3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100
irfp3703.pdf

isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 V
irfp3710pbf.pdf

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili
Otros transistores... IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRF540N , IRFP4004 , IRFP4110 , IRFP4227 , IRFP4229 , IRFP4232 , IRFP4242 , IRFP4310Z , IRFP4321 .
History: KU2310Q | NCEP60T20D | SFG12R03HNF | SIHF610S | WMQ048NV6HG4 | SSU70R750S | JFPC5N80C
History: KU2310Q | NCEP60T20D | SFG12R03HNF | SIHF610S | WMQ048NV6HG4 | SSU70R750S | JFPC5N80C



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