All MOSFET. IRFP3703 Datasheet

 

IRFP3703 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP3703

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 210 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 209 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm

Package: TO247AC

IRFP3703 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP3703 Datasheet (PDF)

1.1. irfp3703pbf.pdf Size:214K _upd-mosfet

IRFP3703
IRFP3703

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028Ω 210A† l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 1

1.2. irfp3703.pdf Size:236K _international_rectifier

IRFP3703
IRFP3703

PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028? 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100C Cont

 4.1. irfp3710pbf.pdf Size:229K _upd-mosfet

IRFP3703
IRFP3703

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

4.2. irfp3710.pdf Size:185K _international_rectifier

IRFP3703
IRFP3703

PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

Datasheet: IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFZ44 , IRFP4004 , IRFP4110 , IRFP4227 , IRFP4229 , IRFP4232 , IRFP4242 , IRFP4310Z , IRFP4321 .

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