IRFP90N20D Todos los transistores

 ..1. Size:89K  international rectifier
 irfp90n20d.pdf

PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023 94A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-247AC Absolute Maxim

 ..2. Size:172K  international rectifier
 irfp90n20dpbf.pdf

PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 94Ao l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-24

 ..3. Size:243K  inchange semiconductor
 irfp90n20d.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP90N20D IIRFP90N20D FEATURES Static drain-source on-resistance RDS(on) 23m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.1. Size:785K  international rectifier
 irfp9240.pdf

PD - 95057 IRFP9240PbF Lead-Free 2/26/04 Document Number 91239 www.vishay.com 1 IRFP9240PbF Document Number 91239 www.vishay.com 2 IRFP9240PbF Document Number 91239 www.vishay.com 3 IRFP9240PbF Document Number 91239 www.vishay.com 4 IRFP9240PbF Document Number 91239 www.vishay.com 5 IRFP9240PbF Document Number 91239 www.vishay.com 6 IRFP9240PbF TO-247AC Pac

 9.2. Size:142K  international rectifier
 irfp9140n.pdf

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 9.3. Size:756K  international rectifier
 irfp9240pbf.pdf

PD - 95057 IRFP9240PbF Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF 2 www.irf.com IRFP9240PbF www.irf.com 3 IRFP9240PbF 4 www.irf.com IRFP9240PbF www.irf.com 5 IRFP9240PbF 6 www.irf.com IRFP9240PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D

 9.4. Size:165K  international rectifier
 irfp9140.pdf

 9.5. Size:236K  international rectifier
 irfp9140npbf.pdf

PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

 9.6. Size:1757K  international rectifier
 irfp9140pbf.pdf

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number 91238 www.vishay.com 1 IRFP9140PbF Document Number 91238 www.vishay.com 2 IRFP9140PbF Document Number 91238 www.vishay.com 3 IRFP9140PbF Document Number 91238 www.vishay.com 4 IRFP9140PbF Document Number 91238 www.vishay.com 5 IRFP9140PbF Document Number 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Re

 9.7. Size:490K  samsung
 irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf

 9.8. Size:519K  samsung
 irfp9240-43 irf9240-43 irf9640-43.pdf

 9.9. Size:520K  samsung
 irfp9130-33 irf9130-33 irf9530-33.pdf

 9.10. Size:504K  samsung
 irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf

 9.11. Size:378K  samsung
 irfp9140-43 irf9540-43.pdf

 9.12. Size:520K  samsung
 irf9130-33 irfp9130-33 irf9530-33.pdf

 9.13. Size:519K  samsung
 irfp9230-33 irf9230-33 irf9630-33.pdf

 9.14. Size:1444K  vishay
 irfp9140 sihfp9140.pdf

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleli

 9.15. Size:1769K  vishay
 irfp9240 sihfp9240.pdf

IRFP9240, SiHFP9240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 V Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 44 Isolated Central Mounting Hole Qgs (nC) 7.1 Fast Switching Qgd (nC) 27 Ease of Paralleling Configuration Single Simple

 9.16. Size:1478K  vishay
 irfp9140pbf sihfp9140.pdf

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of

 9.17. Size:66K  intersil
 irfp9150.pdf

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET 25A, 100V This advanced power MOSFET is designed, tested, and rDS(ON) = 0.150 guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

 9.18. Size:624K  cn minos
 irfp9240.pdf

Description IRFP9240, the silicon P-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS -200 V ID -11 A RDS(ON).Typ 0.34 F

 9.19. Size:241K  inchange semiconductor
 irfp9140n.pdf

isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and