IRFP90N20D MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFP90N20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 580 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 1070 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247AC

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IRFP90N20D Datasheet (PDF)

..1. Size:89K international rectifier
irfp90n20d.pdf pdf_icon

PD - 94301ASMPS MOSFETIRFP90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023 94A Benefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentTO-247ACAbsolute Maxim

..2. Size:172K international rectifier
irfp90n20dpbf.pdf pdf_icon

PD - 95664SMPS MOSFETIRFP90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 200V 0.023 94Aol Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand CurrentTO-24

..3. Size:172K infineon
irfp90n20dpbf.pdf pdf_icon

..4. Size:243K inchange semiconductor
irfp90n20d.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP90N20DIIRFP90N20DFEATURESStatic drain-source on-resistance:RDS(on)23mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

9.1. Size:785K international rectifier
irfp9240.pdf pdf_icon

PD - 95057IRFP9240PbF Lead-Free2/26/04Document Number: 91239 www.vishay.com1IRFP9240PbFDocument Number: 91239 www.vishay.com2IRFP9240PbFDocument Number: 91239 www.vishay.com3IRFP9240PbFDocument Number: 91239 www.vishay.com4IRFP9240PbFDocument Number: 91239 www.vishay.com5IRFP9240PbFDocument Number: 91239 www.vishay.com6IRFP9240PbFTO-247AC Pac

9.2. Size:142K international rectifier
irfp9140n.pdf pdf_icon

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc

9.3. Size:756K international rectifier
irfp9240pbf.pdf pdf_icon

PD - 95057IRFP9240PbF Lead-Freewww.irf.com 12/26/04IRFP9240PbF2 www.irf.comIRFP9240PbFwww.irf.com 3IRFP9240PbF4 www.irf.comIRFP9240PbFwww.irf.com 5IRFP9240PbF6 www.irf.comIRFP9240PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D

9.4. Size:165K international rectifier
irfp9140.pdf pdf_icon

9.5. Size:236K international rectifier
irfp9140npbf.pdf pdf_icon

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

9.6. Size:1757K international rectifier
irfp9140pbf.pdf pdf_icon

PD-95991IRFP9140PbF Lead-Free12/22/04Document Number: 91238 www.vishay.com1IRFP9140PbFDocument Number: 91238 www.vishay.com2IRFP9140PbFDocument Number: 91238 www.vishay.com3IRFP9140PbFDocument Number: 91238 www.vishay.com4IRFP9140PbFDocument Number: 91238 www.vishay.com5IRFP9140PbFDocument Number: 91238 www.vishay.com6IRFP9140PbFPeak Diode Re

9.7. Size:490K samsung
irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf pdf_icon

9.8. Size:519K samsung
irfp9240-43 irf9240-43 irf9640-43.pdf pdf_icon

9.9. Size:520K samsung
irfp9130-33 irf9130-33 irf9530-33.pdf pdf_icon

9.10. Size:504K samsung
irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf pdf_icon

9.11. Size:378K samsung
irfp9140-43 irf9540-43.pdf pdf_icon

9.12. Size:520K samsung
irf9130-33 irfp9130-33 irf9530-33.pdf pdf_icon

9.13. Size:519K samsung
irfp9230-33 irf9230-33 irf9630-33.pdf pdf_icon

9.14. Size:1444K vishay
irfp9140 sihfp9140.pdf pdf_icon

IRFP9140, SiHFP9140Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20 RoHS P-ChannelCOMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of Paralleli

9.15. Size:1769K vishay
irfp9240 sihfp9240.pdf pdf_icon

IRFP9240, SiHFP9240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 VAvailable Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Isolated Central Mounting HoleQgs (nC) 7.1 Fast SwitchingQgd (nC) 27 Ease of ParallelingConfiguration Single Simple

9.16. Size:1478K vishay
irfp9140pbf sihfp9140.pdf pdf_icon

IRFP9140, SiHFP9140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of

9.17. Size:236K infineon
irfp9140npbf.pdf pdf_icon

9.18. Size:66K intersil
irfp9150.pdf pdf_icon

IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power f

9.19. Size:241K inchange semiconductor
irfp9140n.pdf pdf_icon

isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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IRFP90N20D MOSFET. Datasheet pdf. Equivalent

IRFP90N20D Datasheet (PDF)

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