IRFP90N20D Datasheet and Replacement

PD - 94301ASMPS MOSFETIRFP90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023 94A Benefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentTO-247ACAbsolute Maxim

PD - 95664SMPS MOSFETIRFP90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 200V 0.023 94Aol Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand CurrentTO-24

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP90N20DIIRFP90N20DFEATURESStatic drain-source on-resistance:RDS(on)23mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

PD - 95057IRFP9240PbF Lead-Free2/26/04Document Number: 91239 www.vishay.com1IRFP9240PbFDocument Number: 91239 www.vishay.com2IRFP9240PbFDocument Number: 91239 www.vishay.com3IRFP9240PbFDocument Number: 91239 www.vishay.com4IRFP9240PbFDocument Number: 91239 www.vishay.com5IRFP9240PbFDocument Number: 91239 www.vishay.com6IRFP9240PbFTO-247AC Pac

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc

PD - 95057IRFP9240PbF Lead-Freewww.irf.com 12/26/04IRFP9240PbF2 www.irf.comIRFP9240PbFwww.irf.com 3IRFP9240PbF4 www.irf.comIRFP9240PbFwww.irf.com 5IRFP9240PbF6 www.irf.comIRFP9240PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

PD-95991IRFP9140PbF Lead-Free12/22/04Document Number: 91238 www.vishay.com1IRFP9140PbFDocument Number: 91238 www.vishay.com2IRFP9140PbFDocument Number: 91238 www.vishay.com3IRFP9140PbFDocument Number: 91238 www.vishay.com4IRFP9140PbFDocument Number: 91238 www.vishay.com5IRFP9140PbFDocument Number: 91238 www.vishay.com6IRFP9140PbFPeak Diode Re

IRFP9140, SiHFP9140Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20 RoHS P-ChannelCOMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of Paralleli

IRFP9240, SiHFP9240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 VAvailable Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Isolated Central Mounting HoleQgs (nC) 7.1 Fast SwitchingQgd (nC) 27 Ease of ParallelingConfiguration Single Simple

IRFP9140, SiHFP9140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of

IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power f

DescriptionIRFP9240, the silicon P-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitVDS -200 VID -11 ARDS(ON).Typ 0.34 F

isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and