PD - 94301ASMPS MOSFETIRFP90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023 94A Benefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentTO-247ACAbsolute Maxim

PD - 95664SMPS MOSFETIRFP90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 200V 0.023 94Aol Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand CurrentTO-24

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP90N20DIIRFP90N20DFEATURESStatic drain-source on-resistance:RDS(on)23mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

PD - 95057IRFP9240PbF Lead-Free2/26/04Document Number: 91239 www.vishay.com1IRFP9240PbFDocument Number: 91239 www.vishay.com2IRFP9240PbFDocument Number: 91239 www.vishay.com3IRFP9240PbFDocument Number: 91239 www.vishay.com4IRFP9240PbFDocument Number: 91239 www.vishay.com5IRFP9240PbFDocument Number: 91239 www.vishay.com6IRFP9240PbFTO-247AC Pac

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc

PD - 95057IRFP9240PbF Lead-Freewww.irf.com 12/26/04IRFP9240PbF2 www.irf.comIRFP9240PbFwww.irf.com 3IRFP9240PbF4 www.irf.comIRFP9240PbFwww.irf.com 5IRFP9240PbF6 www.irf.comIRFP9240PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

PD-95991IRFP9140PbF Lead-Free12/22/04Document Number: 91238 www.vishay.com1IRFP9140PbFDocument Number: 91238 www.vishay.com2IRFP9140PbFDocument Number: 91238 www.vishay.com3IRFP9140PbFDocument Number: 91238 www.vishay.com4IRFP9140PbFDocument Number: 91238 www.vishay.com5IRFP9140PbFDocument Number: 91238 www.vishay.com6IRFP9140PbFPeak Diode Re

IRFP9140, SiHFP9140Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20 RoHS P-ChannelCOMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of Paralleli

IRFP9240, SiHFP9240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 VAvailable Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Isolated Central Mounting HoleQgs (nC) 7.1 Fast SwitchingQgd (nC) 27 Ease of ParallelingConfiguration Single Simple

IRFP9140, SiHFP9140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of

IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power f

isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and