IRFR2607Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR2607Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: DPAK

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IRFR2607Z Datasheet (PDF)

..1. Size:347K international rectifier
irfr2607zpbf irfu2607zpbf.pdf

PD - 95953IRFR2607ZPbFAUTOMOTIVE MOSFETIRFU2607ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance Dl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 22ml Lead-FreeGDescriptionID = 42ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET u

..2. Size:241K inchange semiconductor
irfr2607z.pdf

isc N-Channel MOSFET Transistor IRFR2607Z, IIRFR2607ZFEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat

0.1. Size:282K international rectifier
auirfr2607ztr.pdf

PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *

0.2. Size:671K infineon
auirfr2607z.pdf

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

7.1. Size:162K international rectifier
irfr2605.pdf

PD - 9.1253IRFR2605IRFU2605HEXFET Power MOSFETUltra Low On-ResistanceDESD ProtectedSurface Mount (IRFR2605) VDSS = 55VStraight Lead (IRFU2605)G150C Operating TemperatureRDS(on) = 0.075Repetitive Avalanche RatedFast SwitchingID = 19ADescription SFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques that achieve extre

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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