IRFR2607Z Datasheet and Replacement

PD - 95953IRFR2607ZPbFAUTOMOTIVE MOSFETIRFU2607ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance Dl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 22ml Lead-FreeGDescriptionID = 42ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET u

isc N-Channel MOSFET Transistor IRFR2607Z, IIRFR2607ZFEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat

PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

PD - 9.1253IRFR2605IRFU2605HEXFET Power MOSFETUltra Low On-ResistanceDESD ProtectedSurface Mount (IRFR2605) VDSS = 55VStraight Lead (IRFU2605)G150C Operating TemperatureRDS(on) = 0.075Repetitive Avalanche RatedFast SwitchingID = 19ADescription SFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques that achieve extre