IRFR2607Z - описание и поиск аналогов

PD - 95953 IRFR2607ZPbF AUTOMOTIVE MOSFET IRFU2607ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m l Lead-Free G Description ID = 42A Specifically designed for Automotive applications, S this HEXFET Power MOSFET u

isc N-Channel MOSFET Transistor IRFR2607Z, IIRFR2607Z FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gat

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6m l 175 C Operating Temperature max. 22m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175 C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

PD - 9.1253 IRFR2605 IRFU2605 HEXFET Power MOSFET Ultra Low On-Resistance D ESD Protected Surface Mount (IRFR2605) VDSS = 55V Straight Lead (IRFU2605) G 150 C Operating Temperature RDS(on) = 0.075 Repetitive Avalanche Rated Fast Switching ID = 19A Description S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extre