Справочник MOSFET. IRFR2607Z

 

IRFR2607Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR2607Z
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 110 W
   Предельно допустимое напряжение сток-исток |Uds|: 75 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 45 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 34 nC
   Время нарастания (tr): 59 ns
   Выходная емкость (Cd): 190 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для IRFR2607Z

 

 

IRFR2607Z Datasheet (PDF)

 ..1. Size:347K  international rectifier
irfr2607zpbf irfu2607zpbf.pdf

IRFR2607Z
IRFR2607Z

PD - 95953IRFR2607ZPbFAUTOMOTIVE MOSFETIRFU2607ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance Dl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 22ml Lead-FreeGDescriptionID = 42ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET u

 ..2. Size:241K  inchange semiconductor
irfr2607z.pdf

IRFR2607Z
IRFR2607Z

isc N-Channel MOSFET Transistor IRFR2607Z, IIRFR2607ZFEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat

 0.1. Size:282K  international rectifier
auirfr2607ztr.pdf

IRFR2607Z
IRFR2607Z

PD - 96323AUTOMOTIVE MOSFETAUIRFR2607ZHEXFET Power MOSFETFeaturesV(BR)DSS75VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 17.6ml 175C Operating Temperaturemax. 22ml Fast Switching Gl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 45A Sl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *

 0.2. Size:671K  infineon
auirfr2607z.pdf

IRFR2607Z
IRFR2607Z

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr

 7.1. Size:162K  international rectifier
irfr2605.pdf

IRFR2607Z
IRFR2607Z

PD - 9.1253IRFR2605IRFU2605HEXFET Power MOSFETUltra Low On-ResistanceDESD ProtectedSurface Mount (IRFR2605) VDSS = 55VStraight Lead (IRFU2605)G150C Operating TemperatureRDS(on) = 0.075Repetitive Avalanche RatedFast SwitchingID = 19ADescription SFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques that achieve extre

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