IRFS3006 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFS3006 datasheet

..1. Size:361K international rectifier
irfs3006pbf irfsl3006pbf.pdf pdf_icon

PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/

..2. Size:258K inchange semiconductor
irfs3006.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS3006 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

0.1. Size:308K international rectifier
irfs3006-7ppbf.pdf pdf_icon

PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 2.1m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID (Silicon Limited) 293A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged

0.2. Size:667K infineon
auirfs3006.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl