IRFS3006 MOSFET Datasheet: N-Ch, 60V, 270A. Full specification with pinout and replacement list

IRFS3006 Specs and Replacement

Type Designator: IRFS3006

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 270 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 182 nS

Cossⓘ - Output Capacitance: 1020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: D2PAK

IRFS3006 substitution

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IRFS3006 datasheet

..1. Size:361K international rectifier
irfs3006pbf irfsl3006pbf.pdf pdf_icon

PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/... See More ⇒

..2. Size:258K inchange semiconductor
irfs3006.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS3006 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒

0.1. Size:308K international rectifier
irfs3006-7ppbf.pdf pdf_icon

PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 2.1m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID (Silicon Limited) 293A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged... See More ⇒

0.2. Size:667K infineon
auirfs3006.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl... See More ⇒