IRFS3307Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS3307Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 128 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 79 nC
Tiempo de subida (tr): 64 nS
Conductancia de drenaje-sustrato (Cd): 420 pF
Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET IRFS3307Z
IRFS3307Z Datasheet (PDF)
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf
PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf
PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av
auirfs3307z auirfsl3307z.pdf
AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant
irfs3307ztrl.pdf
isc N-Channel MOSFET Transistor IRFS3307ZTRLDESCRIPTIONDrain Current I =120A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationHard switched and high frequency circuitsUninterruptible power supplyABSOLUTE MAXIMUM R
irfs3307pbf.pdf
PD - 95706DIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
