IRFS3307Z PDF and Equivalents Search

 

IRFS3307Z Specs and Replacement

Type Designator: IRFS3307Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 128 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: D2PAK

IRFS3307Z substitution

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IRFS3307Z datasheet

 ..1. Size:316K  international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf pdf_icon

IRFS3307Z

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 ..2. Size:316K  international rectifier
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf pdf_icon

IRFS3307Z

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 0.1. Size:707K  infineon
auirfs3307z auirfsl3307z.pdf pdf_icon

IRFS3307Z

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant ... See More ⇒

 0.2. Size:214K  inchange semiconductor
irfs3307ztrl.pdf pdf_icon

IRFS3307Z

isc N-Channel MOSFET Transistor IRFS3307ZTRL DESCRIPTION Drain Current I =120A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible power supply ABSOLUTE MAXIMUM R... See More ⇒

Detailed specifications: IRFS3107, IRFS3107-7P, IRFS31N20D, IRFS3206, IRFS3207, IRFS3207Z, IRFS3306, IRFS3307, 75N75, IRFS33N15D, IRFS3507, IRFS3607, IRFS3806, IRFS38N20D, IRFS4010, IRFS4010-7P, IRFS4115

Keywords - IRFS3307Z MOSFET specs

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