IRFS4229 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS4229
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 330 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 72 nC
Tiempo de subida (tr): 31 nS
Conductancia de drenaje-sustrato (Cd): 390 pF
Resistencia entre drenaje y fuente RDS(on): 0.048 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET IRFS4229
IRFS4229 Datasheet (PDF)
irfs4229pbf.pdf
PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application
irfs4229pbf.pdf
PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application
irfs4229.pdf
Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4229(2).pdf
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Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfs4228pbf irfsl4228pbf.pdf
PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco
irfs4227pbf irfsl4227pbf.pdf
PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch
irfs4227pbf irfsl4227pbf.pdf
PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch
irfs4227.pdf
isc N-Channel MOSFET Transistor IRFS4227, IIRFS4227FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
