All MOSFET. IRFS4229 Datasheet

 

IRFS4229 Datasheet and Replacement


   Type Designator: IRFS4229
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: D2PAK
 

 IRFS4229 substitution

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IRFS4229 Datasheet (PDF)

 ..1. Size:310K  international rectifier
irfs4229pbf.pdf pdf_icon

IRFS4229

PD - 97080BIRFS4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m42 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C91 A and Pass Switch Application

 ..2. Size:257K  inchange semiconductor
irfs4229.pdf pdf_icon

IRFS4229

Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:257K  inchange semiconductor
irfs4229(2).pdf pdf_icon

IRFS4229

Isc N-Channel MOSFET Transistor IRFS4229FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.1. Size:371K  international rectifier
irfs4228pbf irfsl4228pbf.pdf pdf_icon

IRFS4229

PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco

Datasheet: IRFS38N20D , IRFS4010 , IRFS4010-7P , IRFS4115 , IRFS4115-7P , IRFS4127 , IRFS41N15D , IRFS4227 , IRF9640 , IRFS4310 , IRFS4310Z , IRFS4321 , IRFS4410 , IRFS4410Z , IRFS4610 , IRFS4615 , IRFS4620 .

History: VS3510DS | SFB068N150C3

Keywords - IRFS4229 MOSFET datasheet

 IRFS4229 cross reference
 IRFS4229 equivalent finder
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