IRFSL3306 Todos los transistores

 

IRFSL3306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFSL3306
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 230 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 160 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 85 nC
   Tiempo de subida (tr): 76 nS
   Conductancia de drenaje-sustrato (Cd): 500 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
   Paquete / Cubierta: TO262

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IRFSL3306 Datasheet (PDF)

 ..1. Size:323K  international rectifier
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFSL3306
IRFSL3306

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

 ..2. Size:327K  infineon
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFSL3306
IRFSL3306

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

 6.1. Size:316K  international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

IRFSL3306
IRFSL3306

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 6.2. Size:707K  infineon
auirfs3307z auirfsl3307z.pdf

IRFSL3306
IRFSL3306

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

 6.3. Size:316K  infineon
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

IRFSL3306
IRFSL3306

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

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