IRFSL3306 Datasheet. Specs and Replacement

Type Designator: IRFSL3306  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO262

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IRFSL3306 substitution

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IRFSL3306 datasheet

 ..1. Size:327K  international rectifier
 irfb3306pbf irfs3306pbf irfsl3306pbf.pdf pdf_icon

IRFSL3306

IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/... See More ⇒

 6.1. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf pdf_icon

IRFSL3306

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 6.2. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf pdf_icon

IRFSL3306

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av... See More ⇒

 6.3. Size:707K  infineon
 auirfs3307z auirfsl3307z.pdf pdf_icon

IRFSL3306

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant ... See More ⇒

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Detailed specifications: IRFS5620, IRFS59N10D, IRFSL23N20D, IRFSL3004, IRFSL3006, IRFSL3107, IRFSL31N20D, IRFSL3206, IRFB4110, IRFSL33N15D, IRFSL3507, IRFSL3607, IRFSL3806, IRFSL38N20D, IRFSL4010, IRFSL4115, IRFSL4127

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