IRL3705Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL3705Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 240 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220AB

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IRL3705Z Datasheet (PDF)

..1. Size:377K international rectifier
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PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

..2. Size:377K infineon
irl3705zpbf irl3705zspbf irl3705zlpbf.pdf

..3. Size:246K inchange semiconductor
irl3705z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705ZIIRL3705ZFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. Size:378K international rectifier
auirl3705zstrl.pdf

PD - 96345AUTOMOTIVE GRADEAUIRL3705ZAUIRL3705ZSAUIRL3705ZLFeaturesHEXFET Power MOSFETl Logic LevelV(BR)DSS 55VDl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.6.5ml 175C Operating Temperaturel Fast Switching max. 8.0mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)86A l Lead-Free, RoHS CompliantSl Automotiv

0.2. Size:759K infineon
auirl3705z auirl3705zs auirl3705zl.pdf

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

0.3. Size:258K inchange semiconductor
irl3705zs.pdf

Isc N-Channel MOSFET Transistor IRL3705ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Otros transistores... IRFZ48ZL , IRFZ48ZS , IRL1404 , IRL1404L , IRL1404S , IRL1404Z , IRL1404ZL , IRL1404ZS , AO4468 , IRL3705ZL , IRL3705ZS , IRL3713 , IRL3713S , IRL3714Z , IRL3714ZS , IRL3715Z , IRL3715ZL .

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