All MOSFET. IRL3705Z Datasheet

 

IRL3705Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL3705Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 240 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB

 IRL3705Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL3705Z Datasheet (PDF)

 ..1. Size:377K  international rectifier
 irl3705zpbf irl3705zspbf irl3705zlpbf.pdf

IRL3705Z IRL3705Z

PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 ..2. Size:377K  infineon
 irl3705zpbf irl3705zspbf irl3705zlpbf.pdf

IRL3705Z IRL3705Z

PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 ..3. Size:246K  inchange semiconductor
 irl3705z.pdf

IRL3705Z IRL3705Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705ZIIRL3705ZFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:378K  international rectifier
 auirl3705zstrl.pdf

IRL3705Z IRL3705Z

PD - 96345AUTOMOTIVE GRADEAUIRL3705ZAUIRL3705ZSAUIRL3705ZLFeaturesHEXFET Power MOSFETl Logic LevelV(BR)DSS 55VDl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.6.5ml 175C Operating Temperaturel Fast Switching max. 8.0mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)86A l Lead-Free, RoHS CompliantSl Automotiv

 0.2. Size:759K  infineon
 auirl3705z auirl3705zs auirl3705zl.pdf

IRL3705Z IRL3705Z

AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le

 0.3. Size:258K  inchange semiconductor
 irl3705zs.pdf

IRL3705Z IRL3705Z

Isc N-Channel MOSFET Transistor IRL3705ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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