IRL3705Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL3705Z
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 130 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 86 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 240 ns
Выходная емкость (Cd): 420 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO220AB
IRL3705Z Datasheet (PDF)
irl3705zpbf irl3705zspbf irl3705zlpbf.pdf
PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
irl3705zpbf irl3705zspbf irl3705zlpbf.pdf
PD - 95579AIRL3705ZPbFIRL3705ZSPbFFeaturesIRL3705ZLPbFl Logic LevelHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.0mGl Lead-FreeDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
irl3705z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705ZIIRL3705ZFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
auirl3705zstrl.pdf
PD - 96345AUTOMOTIVE GRADEAUIRL3705ZAUIRL3705ZSAUIRL3705ZLFeaturesHEXFET Power MOSFETl Logic LevelV(BR)DSS 55VDl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.6.5ml 175C Operating Temperaturel Fast Switching max. 8.0mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)86A l Lead-Free, RoHS CompliantSl Automotiv
auirl3705z auirl3705zs auirl3705zl.pdf
AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features VDSS 55V Logic Level Advanced Process Technology RDS(on) typ. 6.5m Ultra Low On-Resistance max. 8.0m 175C Operating Temperature ID (Silicon Limited) 86A Fast Switching ID (Package Limited) 75A Repetitive Avalanche Allowed up to Tjmax Le
irl3705zs.pdf
Isc N-Channel MOSFET Transistor IRL3705ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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