IRLR3114Z Todos los transistores

 

IRLR3114Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR3114Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: DPAK
 

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IRLR3114Z Datasheet (PDF)

 ..1. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLR3114Z

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..2. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLR3114Z

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..3. Size:242K  inchange semiconductor
 irlr3114z.pdf pdf_icon

IRLR3114Z

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114ZFEATURESStatic drain-source on-resistance:RDS(on)4.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gat

 0.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

IRLR3114Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

MOSTRAR MÁS

Otros transistores... IRLML6344 , IRLML6346 , IRLP3034 , IRLR024Z , IRLR2905Z , IRLR2908 , IRLR3105 , IRLR3110Z , 2SK3568 , IRLR3636 , IRLR3705Z , IRLR3714Z , IRLR3715Z , IRLR3715ZC , IRLR3717 , IRLR3802 , IRLR3915 .

History: 2N6794U | KMD9D0DN30QA | TPN6R303NC | 4N90G-TF1-T | 2N3380 | R6025FNZ1 | ME3920D-G

 

 
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