IRLR3114Z Todos los transistores

 ..1. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 ..2. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 ..3. Size:242K  inchange semiconductor
 irlr3114z.pdf

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gat

 0.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 7.1. Size:317K  international rectifier
 irlr3110zpbf irlu3110zpbf.pdf

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 7.2. Size:317K  international rectifier
 irlu3110zpbf irlr3110zpbf.pdf

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 7.3. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 7.4. Size:893K  cn vbsemi
 irlr3110zpbf.pdf

IRLR3110ZPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25

 7.5. Size:242K  inchange semiconductor
 irlr3110z.pdf

isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Ga