All MOSFET. IRLR3114Z Datasheet

 

IRLR3114Z Datasheet and Replacement


   Type Designator: IRLR3114Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: DPAK
 

 IRLR3114Z substitution

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IRLR3114Z Datasheet (PDF)

 ..1. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLR3114Z

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..2. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLR3114Z

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..3. Size:242K  inchange semiconductor
 irlr3114z.pdf pdf_icon

IRLR3114Z

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114ZFEATURESStatic drain-source on-resistance:RDS(on)4.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gat

 0.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

IRLR3114Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

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Datasheet: IRLML6344 , IRLML6346 , IRLP3034 , IRLR024Z , IRLR2905Z , IRLR2908 , IRLR3105 , IRLR3110Z , 2SK3568 , IRLR3636 , IRLR3705Z , IRLR3714Z , IRLR3715Z , IRLR3715ZC , IRLR3717 , IRLR3802 , IRLR3915 .

History: AFP9576

Keywords - IRLR3114Z MOSFET datasheet

 IRLR3114Z cross reference
 IRLR3114Z equivalent finder
 IRLR3114Z lookup
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 IRLR3114Z replacement

 

 
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