IRLR8103V Todos los transistores

 

IRLR8103V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR8103V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 91 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 1064 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DPAK

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IRLR8103V datasheet

 ..1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

IRLR8103V

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of

 ..2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

IRLR8103V

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-

 ..3. Size:262K  inchange semiconductor
irlr8103v.pdf pdf_icon

IRLR8103V

Isc N-Channel MOSFET Transistor IRLR8103V FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 0.1. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

IRLR8103V

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

Otros transistores... IRLR3802 , IRLR3915 , IRLR6225 , IRLR7807Z , IRLR7821 , IRLR7821C , IRLR7833 , IRLR7843 , STP80NF70 , IRLR8113 , IRLR8256 , IRLR8259 , IRLR8721 , IRLR8726 , IRLR8729 , IRLR8743 , IRLS3034 .

History: FCP260N60E | FDP023N08B | IRLR8721

 

 

 


History: FCP260N60E | FDP023N08B | IRLR8721

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