IRLR8103V PDF and Equivalents Search

 

IRLR8103V Specs and Replacement

Type Designator: IRLR8103V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 91 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1064 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DPAK

IRLR8103V substitution

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IRLR8103V datasheet

 ..1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

IRLR8103V

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of... See More ⇒

 ..2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

IRLR8103V

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-... See More ⇒

 ..3. Size:262K  inchange semiconductor
irlr8103v.pdf pdf_icon

IRLR8103V

Isc N-Channel MOSFET Transistor IRLR8103V FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

 0.1. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

IRLR8103V

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A... See More ⇒

Detailed specifications: IRLR3802 , IRLR3915 , IRLR6225 , IRLR7807Z , IRLR7821 , IRLR7821C , IRLR7833 , IRLR7843 , STP80NF70 , IRLR8113 , IRLR8256 , IRLR8259 , IRLR8721 , IRLR8726 , IRLR8729 , IRLR8743 , IRLS3034 .

History: IRLR8113

Keywords - IRLR8103V MOSFET specs

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