All MOSFET. IRLR8103V Datasheet

 

IRLR8103V Datasheet and Replacement


   Type Designator: IRLR8103V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 91 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1064 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DPAK
 

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IRLR8103V Datasheet (PDF)

 ..1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

IRLR8103V

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 ..2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

IRLR8103V

PD-94021AIRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The reducedS D-

 ..3. Size:262K  inchange semiconductor
irlr8103v.pdf pdf_icon

IRLR8103V

Isc N-Channel MOSFET Transistor IRLR8103VFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

IRLR8103V

IRLR8103VTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

Datasheet: IRLR3802 , IRLR3915 , IRLR6225 , IRLR7807Z , IRLR7821 , IRLR7821C , IRLR7833 , IRLR7843 , 20N50 , IRLR8113 , IRLR8256 , IRLR8259 , IRLR8721 , IRLR8726 , IRLR8729 , IRLR8743 , IRLS3034 .

History: IPW60R060P7 | 2N6788LCC4 | AP9963GP | ME12N15 | VB1101M | SI4062DY | IRLR7833

Keywords - IRLR8103V MOSFET datasheet

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