IRLU3114Z Todos los transistores

 

IRLU3114Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLU3114Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm

Encapsulados: IPAK

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IRLU3114Z datasheet

 ..1. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLU3114Z

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 ..2. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLU3114Z

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 ..3. Size:261K  inchange semiconductor
 irlu3114z.pdf pdf_icon

IRLU3114Z

isc N-Channel MOSFET Transistor IRLU3114Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 0.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

IRLU3114Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

MOSTRAR MÁS

Otros transistores... IRLSL3036 , IRLSL4030 , IRLTS6342 , IRLU024Z , IRLU2905Z , IRLU2908 , IRLU3105 , IRLU3110Z , 75N75 , IRLU3636 , IRLU3705Z , IRLU3714Z , IRLU3715Z , IRLU3717 , IRLU3802 , IRLU3915 , IRLU7807Z .

History: AUIRFR4104 | IRFB4332 | IRFB4410ZG | IRFB4321 | IRFB4321G | IRFB4610 | IRFB4410

 

 

 

 

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