IRLU3114Z Datasheet. Specs and Replacement

Type Designator: IRLU3114Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: IPAK

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IRLU3114Z datasheet

 ..1. Size:315K  international rectifier
irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLU3114Z

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance ... See More ⇒

 ..2. Size:315K  international rectifier
irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLU3114Z

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance ... See More ⇒

 ..3. Size:261K  inchange semiconductor
irlu3114z.pdf pdf_icon

IRLU3114Z

isc N-Channel MOSFET Transistor IRLU3114Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 0.1. Size:706K  infineon
auirlr3114z auirlu3114z.pdf pdf_icon

IRLU3114Z

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L... See More ⇒

Detailed specifications: IRLSL3036, IRLSL4030, IRLTS6342, IRLU024Z, IRLU2905Z, IRLU2908, IRLU3105, IRLU3110Z, IRF730, IRLU3636, IRLU3705Z, IRLU3714Z, IRLU3715Z, IRLU3717, IRLU3802, IRLU3915, IRLU7807Z

Keywords - IRLU3114Z MOSFET specs

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